Foregrounding the Research of Academics in Palestine
Properties of the defect mode of a ternary photonic crystal having an n-doped semiconductor as a defect layer: TE case
Materials Science
Islamic University of Gaza
Alhamss, D.N.; Taya, S.A.; Çolak, I.; Patel, S.K.
Alhamss, Dana N. (57433576800); Taya, Sofyan A. (6701381761); Çolak, Ilhami (6602990030); Patel, Shobhit K. (37102386100)
57433576800; 6701381761; 6602990030; 37102386100
2022
Materials Science in Semiconductor Processing
Properties of the defect mode of a ternary photonic crystal having an n-doped semiconductor as a defect layer: TE case
144
Elsevier Ltd
106626
Department of Physics, Islamic University of Gaza, Gaza, Palestine; Department of Electrical and Electronic Engineering, Istanbul Nisantasi University, Istanbul, Turkey; Department of Computer Engineering, Marwadi University, Rajkot, GJ, India
Alhamss, Dana N., Department of Physics, Islamic University of Gaza, Gaza, Palestine; Taya, Sofyan A., Department of Physics, Islamic University of Gaza, Gaza, Palestine; Çolak, Ilhami, Department of Electrical and Electronic Engineering, Istanbul Nisantasi University, Istanbul, Turkey; Patel, Shobhit K., Department of Computer Engineering, Marwadi University, Rajkot, GJ, India
S.A. Taya; Physics Department, Islamic University of Gaza, Gaza, P.O. Box 108, Palestine; email: staya@iugaza.edu.ps
